SPECIAL is a collaborative research project that aims to develop on-demand single-photon sources (SPS) emitting at the telecom C-band (1.55 µm). The project methodology relies on Selective Area Epitaxy (SAE) of InAs quantum dots (QDs) on InP substrates to achieve high purity, indistinguishability, and brightness. The research also involves coupling these QDs to photonic cavities, specifically circular Bragg gratings and micropillar cavities with Distributed Bragg Reflectors (DBR), to maximize photon extraction efficiency.

We serve as the Leader of Work Package 3 (WP3), which focuses on coupling single InAs/InP quantum dots to microcavities. We are also actively involved in Work Package 1 (WP1) regarding selective area epitaxy. Our specific responsibilities include III-V growth and acting as the intermediary between collaborative partners. We are tasked with the fabrication of cavities, depositing dielectric top mirrors at cleanroom facilities, and contributing to the Molecular Beam Epitaxy (MBE) growth of Distributed Bragg Reflectors (DBR).